16:332:569(F) Database System Engineering (3) Relational data model, relational database management system, relational query languages, parallel database systems, database computers, and distributed database systems. |
16:332:570(S) Robust Computer Vision (3) A toolbox of advanced methods for computer vision using robust estimation, clustering, probabilistic techniques, invariance. Applications include feature extraction, image segmentation, object recognition, and 3-D recovery. Prerequisite: 16:332:561. |
16:332:571(S) Virtual Reality Technology (3) Introduction to virtual reality. Input/output tools. Computing architecture. Modeling. Virtual reality programming. Human factors. Applications. Future systems. Prerequisite: 16:332:560. |
16:332:573(S) Data Structures and Algorithms (3)
Programming in C
and C++. Data structures and algorithms commonly used in engineering
software applications. Stacks, linked lists, queues, sorting, trees,
search trees, hashing, heaps, graphs, and graph algorithms. Computation
models and complexity.¿ .
|
16:332:574(F) Computer-Aided Digital VLSI Design (3) Advanced computer-aided digital VLSI chip design, CMOS technology, domino logic, precharged busses, case studies of chips, floor planning, layout synthesis, routing, compaction circuit extraction, multilevel circuit simulation, circuit modeling, fabrication processes, and other computer-aided design tools. |
16:332:575(S) VLSI Array Processors (3) VLSI technology and algorithms; systolic and wavefront-array architecture; bit-serial pipelined architecture; DSP architecture; transputer; interconnection networks; wafer-scale integration; neural networks. Prerequisite: 16:332:574. |
16:332:576(S) Testing of Ultra Large Scale Circuits (3) Algorithms for test-pattern generation for combinational, sequential, and CMOS circuits. Design of circuits for easy testability. Design of built-in self-testing circuits. Prerequisite: 16:332:563. |
16:332:577(S) Analog and Low-Power Digital VLSI Design (3) Transistor design and chip layout of commonly used analog circuits, such as OPAMPs, A/D, and D/A converters; sample-and-hold circuits; filters; modulators; phase-locked loops; and voltage-controlled oscillators. Low-power design techniques for VLSI digital circuits, and system-on-a-chip layout integration issues between analog and digital cores. Prerequisite: 16:332:574. |
16:332:579Advanced Topics in Computer Engineering (3) In-depth study of topics pertaining to computer engineering, such as microprocessor system design; fault-tolerant computing; real-time system design. Subject areas vary from year to year. Prerequisite: Permission of instructor. |
16:332:580(F) Electric Waves and Radiation (3) Static-boundary value problems, dielectrics, wave equations, propagation in lossless and lossy media, boundary problems, waveguides and resonators, radiation fields, antenna patterns and parameters, arrays, transmit-receive systems, antenna types. Prerequisite: Elementary electromagnetics. |
16:332:581(F) Introduction to Solid-State Electronics (3) Introduction to quantum mechanics; WKB method; perturbation theory; hydrogen atom; identical particles; chemical bonding; crystal structures; statistical mechanics; free-electron model; quantum theory of electrons in periodic lattices. |
16:332:583(F) Semiconductor Devices I (3) Charge transport; diffusion and drift current; injection, lifetime, recombination, and generation processes; p-n junction devices; transient behavior; FETs, I-V, and frequency characteristics; MOS devices C-V, C-f, and I-V characteristics; operation of bipolar transistors. |
16:332:584(S) Semiconductor Devices II (3) Review of microwave devices, O- and M-type devices, microwave diodes, Gunn, IMPATT, TRAPATT, scattering parameters and microwave amplifiers, heterostructures and III-V compound-based BJTs and FETs. Prerequisite: 16:332:583. |
16:332:587(F) Transistor Circuit Design (3) Design of discrete transistor circuits; amplifiers for L.F., H.F., tuned, and power applications biasing; computer-aided design; noise; switching applications; operational amplifiers; linear circuits. |
16:332:588(S) Integrated Transistor Circuit Design (3) Design of digital integrated circuits based on NMOS, CMOS, bipolar, BiCMOS, and GaAs FETs; fabrication and modeling; analysis of saturating and nonsaturating digital circuits, sequential logic circuits, semiconductor memories, gate arrays, PLA and GaAs LSI circuits. Prerequisite: 16:332:587. |
16:332:590(S) Integrated Circuits (3) Basic processing of ICs, diffusion, and ion implantation; isolation methods; integrated resistors and inductors; junction capacitors; diodes, FET, MOS and bipolar transistors; thermal effects and basic linear integrated circuits. Prerequisite: 16:332:583. |
16:332:591(F) Optoelectronics I (3) Principles of laser action, efficiency, CW and pulse operation, mode locking, output coupling, equivalent circuits, gaseous and molecular lasers, solid-state lasers, single and double heterojunction lasers, different geometrics, fabrication, degradation, and application to holography, communication, medicine, and fusion. Prerequisites: 16:332:580, and 581 or 583. |
16:332:592(S) Optoelectronics II (3) Photodetectors, including avalanche, Schottky, p-i-n, and multi element detectors; display devices, including semiconductor, liquid crystals, electrochromics, electroluminescent panels; optoisolaters; fiber optics communication and optoelectronics in information systems. Prerequisite: 16:332:591. |
16:332:593(S) Electronics Packaging (3) Overview of microelectronic packaging. Calculation of resistance, inductance, capacitance, and RF skin effects. Interconnect-transfer functions and signal integrity. Packaging analysis and simulations of power, ground, and cross-talk noise. Prerequisites: 16:332:580 and 587. |
16:332:594(F) Solar Cells (3) Photovoltaic material and devices, efficiency criteria, Schottky barrier, p-n diode, heterojunction and MOS devices, processing technology, concentrator systems, power system designs, and storage. Prerequisite: 16:332:583 or equivalent. |
16:332:596(S) Semiconductor Surfaces (3) Surface composition and structure of semiconductor, ultrahigh vacuum technology, Auger electron spectroscopy, low-energy electron diffraction, photoemission spectroscopy, secondary ion mass-spectroscopy. |
16:332:597(S) Material Aspects of Semiconductors (3) Preparation of elemental and compound semiconductors. Bulk crystal growth techniques. Epitaxial growth techniques. Impurities and defects and their incorporation. Characterization techniques to study the structural, electrical, and optical properties. Prerequisite: 16:332:581. |
16:332:599Advanced Topics in Solid-State Electronics (3) Topics vary and include semiconductor materials, surfaces, and devices; optoelectronic devices; sensors; photovoltaics; fiber optics; and analog/digital circuit design. Prerequisite: Permission of instructor. |
16:332:601,602Special Problems (BA,BA) Investigation in selected areas of electrical engineering. Prerequisite: Permission of instructor. |
16:332:618Seminar in Systems Engineering (1) Presentation involving current research given by advanced students and invited speakers. Term papers required. |
16:332:638Seminar in Digital Signal Processing (1) Presentation involving current research given by advanced students and invited speakers. Term papers required. |
16:332:658Seminar in Communications Engineering (1) Presentation involving current research given by advanced students and invited speakers. Term papers required. |
16:332:678Seminar in Computer Engineering (1) Presentation involving current research given by advanced students and invited speakers. Term papers required. |
16:332:698Seminar in Solid-State Electronics (1) Presentation involving current research given by advanced students and invited speakers. Term papers required. |
16:332:699Colloquium in Electrical and Computer Engineering (0) Eminent figures in electrical and computer engineering invited as guest lecturers on current research topics and major trends. Each full-time M.S. and Ph.D. student must take the colloquium, and each must have 80 percent attendance records. M.S. students must take the colloquium for two terms but get 0 credits. Ph.D. students must take the colloquium for four terms but get 0 credits. |
16:332:701,702Research in Electrical Engineering (3,3) |
